Nanopencil as a wear-tolerant probe for ultrahigh density data storage

A dielectric-sheathed carbon nanotube probe, resembling a “nanopencil,” has been fabricated by conformal deposition of silicon-oxide on a carbon nanotube and subsequent “sharpening” to expose its tip. The high aspect-ratio nanopencil probe takes advantage of the small nanotube electrode size, while avoiding bending and buckling issues encountered with naked or polymer-coated carbon nanotube probes. Since the effective electrode diameter of the probe would not change even after significant wear, it is capable of long-lasting read/write operations in contact mode with a bit size of several nanometers

Fully inverted single-digit nanometer domains in ferroelectric films

Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density (>1 Tbit/in.^2) probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to 40 Tbit/in.^2 data storage densitie

Mechanical Model of Vertical Nanowire Cell Penetration

Direct access into cells’ interiors is essential for biomolecular delivery, gene transfection, and electrical recordings yet is challenging due to the cell membrane barrier. Recently, molecular delivery using vertical nanowires (NWs) has been demonstrated for introducing biomolecules into a large number of cells in parallel. However, the microscopic understanding of how and when the nanowires penetrate cell membranes is still lacking, and the degree to which actual membrane penetration occurs is controversial. Here we present results from a mechanical continuum model of elastic cell membrane penetration through two mechanisms, namely through “impaling” as cells land onto a bed of nanowires, and through “adhesion-mediated” penetration, which occurs as cells spread on the substrate and generate adhesion force. Our results reveal that penetration is much more effective through the adhesion mechanism, with NW geometry and cell stiffness being critically important. Stiffer cells have higher penetration efficiency, but are more sensitive to NW geometry. These results provide a guide to designing nanowires for applications in cell membrane penetration

Tuning the Built-in Electric Field in Ferroelectric Pb(Zr_0.2Ti_0.8)O₃ Films for Long-Term Stability of Single-Digit Nanometer Inverted Domains

The emergence of new technologies, such as whole genome sequencing systems, which generate a large amount of data, is requiring ultrahigh storage capacities. Due to their compactness and low power consumption, probe-based memory devices using Pb­(Zr_0.2Ti_0.8)­O₃ (PZT) ferroelectric films are the ideal candidate for such applications where portability is desired. To achieve ultrahigh (>1 Tbit/in²) storage densities, sub-10 nm inverted domains are required. However, such domains remain unstable and can invert back to their original polarization due to the effects of an antiparallel built-in electric field in the PZT film, domain-wall, and depolarization energies. Here, we show that the built-in electric-field can be tuned and suppressed by repetitive hydrogen and oxygen plasma treatments. Such treatments trigger reversible Pb reduction/oxidation activity, which alters the electrochemistry of the Pb overlayer and compensates for charges induced by the Pb vacancies. This tuning mechanism is used to demonstrate the writing of stable and equal size sub-4 nm domains in both up- and down-polarized PZT films, corresponding to eight inverted unit-cells. The bit sizes recorded here are the smallest ever achieved, which correspond to potential 60 Tbit/in² data storage densities